SiC devices
The RD team of Orientasl Semiconductor has rich experience in the research of wide bandgap semiconductors, and has successively developed IGBTs and wide bandgap FETs with parallel SiC. The high-speed IGBT with parallel SiC diodes greatly improves the characteristics of Eon, Trr, Qrr and Qg, and is suitable for use in systems requiring high efficiency. It supports 80-100kHz high-speed switches and totem-pole bridgeless PFC applications.
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